Catania HQ CHALLENGE: 3C-SiCHetero-epitaxiALLy grown on silicon compliancE substrates and new 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices 10 Marzo 2017
Catania HQ The molecular monolayer doping as an alternative to standard doping methods for semiconductors. 20 Gennaio 2017
