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Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time

Publication date: 28 Ago 2020

JournalSource: LEGACY
Authors: Marica Canino, Giulio Pizzochero, Roberta Nipoti, Virginia Boldrini
Publisher
Trans Tech Publications Ltd
Origin
Materials Science Forum
Legacy ID
9b64a809aaea3940677bda32f14da285
Biblio references
Volume: 1004 Pages: 698-704
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