3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect

Publication date: 28 Ago 2020

JournalSource: LEGACY
Publisher
Trans Tech Publications Ltd
Origin
Materials Science Forum
Legacy ID
a4beaccc234bf45dba997c3c32a74f47
Biblio references
Volume: 1004 Pages: 683-688