Characterisation of optical phonons within epitaxial Ge2Sb2Te5/InAs (111) structures

Publication date: 1 Ago 2022

JournalSource: LEGACY

Femto-second pump-probe and micro-Raman spectroscopy (RS) measurements have been made to identify optical phonons in Ge 2 Sb 2 Te 5/InAs (111) and an InAs (111) substrate. A theory of transient stimulated Raman scattering (TSRS) incorporating the Raman tensor predicts which phonon modes may be observed in transient reflectance (R) and anisotropic reflectance (AR) pump-probe measurements, and how their amplitudes depend upon angles φ and θ that describe the orientation of the pump and probe beam electric fields within the sample plane. AR measurements of an InAs (111) substrate revealed the 6.5 THz T 2 transverse optical phonon with amplitude proportional to sin (2 (θ− φ)), as expected for both TSRS and the specular optical Kerr effect (SOKE), confirming that TSRS and SOKE are equivalent descriptions of the same phenomenon. The AR responses of Ge 2 Sb 2 Te 5/InAs (111) revealed …

Publisher
Pergamon
Origin
Solid State Communications
Legacy ID
18d4c69fc5dd5867f8672edbd7f810ae
Biblio references
Volume: 351 Pages: 114788