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Hall measurements under weak persistent photoexcitation in Si-doped Al x Ga1-x As

Publication date: 25 Nov 2020

BookSource: LEGACY
Authors: Andrea Parisini
Publisher
CRC Press
Origin
D (X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991
Legacy ID
30362ceca354918dcbbc69bedbcb2f1d
Biblio references
Pages: B27-B30
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