Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Publication date: 1 Mag 2024

JournalSource: LEGACY

In this work an extensive characterization over XeCl multishot laser irradiation was performed at different energy densities and with different thicknesses of graphitic coating superimposed on P and Al implanted 4H–SiC epitaxial layers. It was noted that at 0.6 J/cm2 the 180 nm coating provides a smooth surface unlike lower thicknesses or uncoated treatments. The μ-Raman investigation showed the crystalline quality as a function of the energy density. Through Medium Angle Annular Dark Field-Scanning Transmission Electron Microscopy (MAADF-STEM) and High Angle Annular Dark Field (HAADF)-STEM investigations, the absence of extended defects and the presence of regions with higher density of carbon interstitials (Ci) was revealed. Circular Transfer Length Method (CTLM) measurements demonstrated how irradiation at 0.9 J/cm2 succeeded to reach values of (7.28 ± 1.15) × 102 Ω/sq, lower than the …

Publisher
Pergamon
Origin
Materials Science in Semiconductor Processing
Legacy ID
da39a70c9b0abae591d97b1536975259
Biblio references
Volume: 174 Pages: 108175