Direct Band Gap Chalcohalide Semiconductors: Quaternary AgBiSCl<sub>2</sub> Nanocrystals

Publication date: 27 Nov 2023

JournalSource: OPENALEXOpenAlex type: articleOpen Access
Authors: Danila Quarta, Stefano Toso, Antonio Fieramosca, Lorenzo Dominici, Rocco Caliandro, Anna Moliterni, David Maria Tobaldi, Gabriele Saleh, Irina Gushchina, Rosaria Brescia, Mirko Prato, Ivan Infante, Adriano Cola, Cinzia Giannini, Liberato Manna, Giuseppe Gigli, Carlo Giansante

High Resolution Image Download MS PowerPoint Slide Heavy pnictogen chalcohalide semiconductors are coming under the spotlight for energy conversion applications. Here we present the colloidal synthesis of phase pure AgBiSCl 2 nanocrystals. This quaternary chalcohalide compound features a quasi-two-dimensional crystal structure and a direct band gap, in contrast with the monodimensional structure and the indirect band gap peculiar to the orthorhombic, ternary Bi chalcohalides. Consistently, colloidal AgBiSCl 2 nanocrystals exhibit photoinduced luminescence compatible with both band edge excitons and midgap states. This is the first observation of band edge emission in chalcohalide nanomaterials at large, although exciton recombination in our AgBiSCl 2 nanocrystals mostly occurs via nonradiative pathways. This work further advances our knowledge on this class of mixed anion semiconductor nanomaterials and provides a contribution to establishing chalcohalides as a reliable alternative to metal chalcogenides and halides.

Origin
Chemistry of Materials
Volume
35
Issue
23
Pages
9900-9906
Cited by
25
Legacy ID
55d306f308d775dd016ffccff8b299c4
Biblio references
Volume: 35 Issue: 23 Pages: 9900-9906