Nowadays, Schottky-barrier diode (SBD) on 4H-SiC is an established technology used in several real- world applications [1]. Although this large use, additional improvement is still possible for a fully exploitation of the 4H-SiC potentialities. Essentially, the properties of the metal/4H-SiC contact are at the base of the SBD performance and the achievement of a superior control on this interface drives an optimization of the use of the SBD. Over the last two decades, various approaches have been considered for gaining control in this system. Particular attention was paid to the choice of the metal and its evolution with thermal annealing in the Schottky contact formation [2,3]. Recently, the exploration of low-work function materials, such as W and Mo-based contacts, has demonstrated promising results for minimizing the power dissipation of Schottky diodes and offering good thermal stability [3,4]. In particular, Mo has …