The cubic silicon carbide (3C-SiC) layers on silicon (or silicon-based) substrates are considered interesting materials for sensors and micro- and nano-electromechanical systems (MEMS and NEMS). The problem of stress control within the 3C-SiC film is crucial for these applications. In extreme conditions, SiC appears to be a good candidate to replace Si due to its exceptional physical and chemical properties [1]. Furthermore, the high Young's modulus [2] and the relatively low mass density induce a significantly higher resonant frequencies and quality factors in resonant devices at the same geometrical dimensions in comparison with Si or gallium nitride [3-4]. Recent results [5] have put into evidence that the presence of a high tensile stress on the 3C-SiC is crucial to obtain ultra-high Q-factor resonators on 3C-SiC/Si MEMS. Therefore, it becomes essential to be aware of the stress and its distribution within the …