The control of the electrical properties of metal/SiC interfaces is an open research topic, due to the possible implications in Schottky barrier diodes technology [1], with tailored characteristics and reduced power losses [2]. Over the years, metals with different work functions (WFs) have been employed for tuning the metal/4H-SiC Schottky Barrier Height (SBH), due to the linear dependence of the SBH on the metal WF [3]. However, the occurrence of Fermi-level-pinning (FLP) reduces the dependence of the SBH on the metal WF [4]. Hence, alternative surface/interface processes have been explored. For example, the insertion of foreign species in the 4H-SiC layer by ion implantation can produce modifications on the SBH properties, by near-surface dopant deactivation [5] or by the creation of electrically active interface defects [6]. In this context, sulfur (S) is known since long time to work as a deep donor of 4H-SiC [7 …