Two-dimensional electron gas isolation mechanism in Al0. 2Ga0. 8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation

Publication date: 15 Nov 2024

JournalSource: LEGACY
Publisher
North-Holland
Origin
Applied Surface Science
Legacy ID
4dde8a63baae941b9142a416b39dcbfb
Biblio references
Volume: 674 Pages: 160885