This work investigates the physical properties of Al 1− x Sc x N thin films sputtered at low temperatures by varying the process conditions. Specifically, the films were deposited at room temperature by applying a radio frequency power equal to 150 W to an AlSc alloy (60: 40) target, varying the nitrogen flux percentage in the (Ar+ N 2) sputtering atmosphere (30%, 40%, 50%, and 60%) and keeping constant the working pressure at 5× 10− 3 mbar. The structural and chemical properties of the Al 1− x Sc x N films were studied by x-ray diffraction and Rutherford backscattering spectrometry techniques, respectively. The piezoelectric response was investigated by piezoresponse force microscopy. In addition, the surface potential was evaluated for the first time for Sc-doped AlN thin films by Kelvin probe force microscopy, providing piezoelectric coefficients free from the no-piezoelectric additional effect to the mechanical …