Optimizing electrical AFM probing for 2D materials: The crucial role of tip-sample electrical interactions and back contact configurations

Publication date: 15 Mar 2025

JournalSource: LEGACY

As electrical atomic force microscopy (AFM) gains popularity for characterizing two-dimensional (2D) materials, understanding the relationship between analytical conditions and nanoscopic material properties is crucial. This study focuses on contact-mode electrical methods, using MoS2 as a reference material and conductive AFM (C-AFM) as the analysis technique. We investigate the impact of back contact configuration, tip-sample pressure, voltage polarity, and moisture-induced surface contamination on the extraction of localized electrical properties, including in-plane leakage current and defectivity. Our findings highlight the importance of balancing tip-sample contact resistance and the physical distance between the probe and back contact when assessing in-plane leakage current. Additionally, we explore how tip-sample to back contact distance affects the extraction of Schottky barrier height (SBH) using …

Publisher
Pergamon
Origin
Materials Science in Semiconductor Processing
Legacy ID
34dccbda1003b0ede0f99be0b244b856
Biblio references
Volume: 188 Pages: 109247