Abstract A scalable epitaxy of 2D layered materials and heterostructures constitutes a crucial step in developing novel optoelectronic applications based on high‐crystalline quality 2D materials. Here, the formation of continuous, strain‐free, high‐crystalline quality 2D hexagonal gallium telluride (h‐GaTe) directly on epitaxial graphene using molecular beam epitaxy is demonstrated. Morphological and structural characterizations evidence a coherent layer at the heterostructure interface having an in‐plane lattice constant of 4.05 ± 0.01 . The few‐layer thick graphene determines the epitaxial registry of the h‐GaTe with grains of sixfold symmetry and a multilayer‐type homoepitaxial growth. Deposition temperature‐ and time‐dependent surface topography indicate that the interlayer diffusion of adatoms plays a crucial role in achieving smooth GaTe films. Contrastive principal component analysis allows for screening large in situ diffraction data as a function of growth parameters. In this way, the trajectory of the 2D h‐GaTe growth is mapped through phase space. These results are relevant for integrating epitaxial material in the fabrication of high‐performance multifunctional devices.