Two-dimensional (2D) transition metal dichalcogenides (TMDs) ternary alloys, such as Mo x W 1-x S 2 , are very appealing for the possibility of continuously tuning their excitonic bandgap by the composition. However, the deposition of ultra-thin (monolayers or few-layers) alloys with laterally uniform composition on large area represents a main challenge of currently adopted synthesis methods. In this work, we demonstrated the growth of highly uniform Mo 0.5 W 0.5 S 2 bi-layers on cm 2 size SiO 2 /Si substrates by employing a simple and scalable approach, i.e. the sulfurization of a pre-deposited ultra-thin Mo/W stack at a temperature of 700 °C. Comparison of Mo(1.2 nm)/SiO 2 , W(1.2 nm)/SiO 2 , and Mo(1.2 nm)/W(1.2 nm)/SiO 2 samples after identical sulfurization conditions revealed very different results, i.e. (i) a uniform monolayer (1L) MoS 2 film, (ii) separated multilayer WS 2 islands, and (iii) a uniform bilayer (2L) Mo 0.5 W 0.5 S 2 film. This indicates how W surface diffusion and coalescence on SiO 2 surface plays a main role in WS 2 islands formation, whereas the reaction between S vapour with Mo films or Mo/W stacks represents the dominant mechanism for the formation of MoS 2 and the MoWS 2 alloy. Micro-photoluminescence (PL) mapping of the obtained 2L-Mo 0.5 W 0.5 S 2 film showed an excellent uniformity of light emission on large area with an exciton peak at 1.97 eV, significantly blue-shifted with respect to PL emission of 1L-MoS 2 at 1.86 eV. Such highly uniform optical properties make the grown MoWS 2 alloy very promising for optoelectronic applications.