Electrically-tunable Free-electron Nonlinearity in Heavily n-doped InGaAs

Publication date: 17 Ago 2025

JournalSource: OPENALEXOpenAlex type: articleClosed Access
Authors: Huatian Hu, Tommaso Venanzi, Andrea Rossetti, Raffaella Polito, A. Notargiacomo, Antonio Valletta, F. Mattioli, G. Alvarez-Perez, A. Bousseksou, Luca Lucia, G. Beaudoin, I. Sagnes, R. Colombelli, Markus Ludwig, Daniele Brida, M. Pea, Valeria Giliberti, C. Ciracì, Michele Ortolani

We experimentally and theoretically investigate the electrically-tunable third-harmonic generation in the mid-infrared in a free electron liquid that can be described by a hydrodynamic model. Grating-gate field effect devices fabricated on a heavily n-type doped InGaAs/InP heterostructure have been pumped with ultrashort mid-IR pulses. A dependence of the third-harmonic generation efficiency on gate voltage bias has been observed. Our findings pave the way for future exploitation of tunable free-electron nonlinearities in semiconductor-based photonic integrated circuits incorporating gated heavily-doped semiconductor plasmonic waveguide sections.

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OpenAlex
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1-2
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