AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Publication date: 1 Gen 2024

JournalSource: OPENALEXOpenAlex type: articleOpen Access
Authors: David Maria Tobaldi, Luc Lajaunie, Arianna Cretì, Massimo Cuscunà, Iolena Tarantini, Marco Esposito, Gianluca Balestra, Mauro Lomascolo, A. Passaseo, Vittorianna Tasco

The ultrawide-bandgap AlGaN alloy system shows great potential for advancing the next generation of UV optoelectronic devices.

Origin
CrystEngComm
Volume
26
Issue
26
Pages
3475-3482
Cited by
2