Abstract Silicon carbide (SiC) is a promising radiation detector semiconductor material for harsh environments, due to its large bandgap, high carrier mobility, and radiation hardness. The response of ultra thin free-standing SiC membranes, where the bulk thick substrate is removed, to ultra-high dose rate (UHDR) pulsed electron beams was recently investigated with the aim of demonstrating the suitability for real-time dosimetry and beam monitoring in FLASH radiotherapy. A 10 µm thick membrane was exposed to the UHDR 9 MeV electron pulses accelerated at the Centro Pisano for FLASH radiotherapy. The collected charge was highly linear with the delivered DPP and instantaneous dose rate, up to 0.75 Gy/pulse and 0.19 MGy/s respectively. Moreover, the measurement of the temporal structure of the single electron pulse was performed demonstrating a temporal response consistent with sub-microsecond resolution. Geant4 simulations confirmed the transparency of the realized membranes to 9 MeV electrons inducing negligible perturbation to the beam in terms of angular and energy spread and proving their possible future application for beam monitoring in FLASH radiotherapy.