Abstract In this work, simulations are conducted to optimize a Silicon Carbide (SiC) detector for the detection of 14.1 MeV neutrons [1]. The device features an active thickness achieved through epitaxial growth of 250 μm and an active area of 25 mm 2 . In the first stage of the FLUKA simulations, the performance of the SiC detector is compared with Diamond and Silicon detectors of identical geometry. Furthermore, FLUKA simulations show saturation in alpha-particle production at a SiC thickness of approximately 200 μm. Finally, numerical simulations using Synopsys tools are employed to optimize the edge structure of the SiC detector.