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Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

Publication date: 28 Dic 2022

JournalSource: LEGACY
Authors: Patrick Fiorenza, Fabrizio Roccaforte, Filippo Giannazzo, Francesco La Via, Luca Maiolo, Guglielmo Fortunato
Publisher
AIP Publishing LLC
Origin
Journal of Applied Physics
Legacy ID
5f5bdc1c8bdd63aa3d4c1d49686e98be
Biblio references
Volume: 132 Issue: 24 Pages: 245701
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