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Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs

Publication date: 9 Giu 2022

JournalSource: LEGACY
Authors: Patrick Fiorenza, Fabrizio Roccaforte, Antonino La Magna, Antonio Valletta, Guglielmo Fortunato
Publisher
IOP Publishing
Origin
Semiconductor Science and Technology
Legacy ID
fde1891d6f41b2977a44ea9df1ed29d4
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