Pubblicazioni
- Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices
- Modular Printed Circuit Boards for Broadband Characterization of Nanoelectronic Quantum Devices
- Spin-dependent recombination and single charge dynamics in silicon nanostructrures
- Few electron limit of n-type metal oxide semiconductor single electron transistors
- Charge dynamics of a single donor coupled to a few-electron quantum dot in silicon
- Few electron limit of n-type metal oxide semiconductor single electron transistors
- Chemical vapor deposition growth of Fe {sub 3} O {sub 4} thin films and Fe/Fe {sub 3} O {sub 4} bi-layers for their integration in magnetic tunnel junctions
- Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions
- Synthesis of magnetic tunnel junctions with full in situ atomic layer and chemical vapor deposition processes
- Chemical vapor deposition of polycrystalline Fe3O4 thin films by using the cyclohexadiene iron tricarbonyl liquid precursor
- Spin blockade in a triple silicon quantum dot in CMOS technology
- Adiabatic charge control in a single donor atom transistor
- Thermal and electrical characterization of materials for phase-change memory cells
- Atomic layer deposition of magnetic thin films
- Defects at the High-k/Semiconductor Inter-faces Investigated by Spin Dependent Spectroscopies
- DEFECTS AT THE HIGH-κ/SEMICONDUCTOR INTERFACES INVESTIGATED BY SPIN DEPENDENT SPECTROSCOPIES
- Defects in high-x gate dielectric stacks, NATO Advanced Studies Institute, Series II: Mathematics, Physics and Chemistry
- Phase Change Memory (PCM): principle 1/2
