Pubblicazioni
- Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC
- Superior quality of n− GaN epilayer grown on ammonothermal substrate accessed by DLTS
- Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene
- Calculation of the Whole Interface State Density Profile in SiO<sub>2</sub>/SiC Lateral MOSFETs
- Electrical Characterization of Mo-Carbide Schottky Contacts on 4H-SiC
- Challenges in 1SSF Detection in 4H-SiC Epilayer and Related Failure
- Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS <sub>2</sub> Heterostructures With GaN
- Editor’s Choice Articles in the Electronic Materials Section of Materials in 2025
- Investigation of Ti/Al/Ni/Au ohmic contacts for AlScN/GaN HEMTs
- Modeling of Non-Ideal Ni/Ga <sub>2</sub> O <sub>3</sub> Schottky Contacts by Two-Barrier Thermionic Emission Model
- Scalable Dielectrics Technology for 2D Materials Electronics
- Thermionic emission conduction in Mo AlGaN/GaN diodes in the presence of Schottky barrier inhomogeneities
- Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS <sub>2</sub> Transistors
- Laser Processing of Ti Contacts for Ohmic Behavior on P-Type 4H-SiC
- Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
- Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
- Structural and electrical properties of AlGaN/GaN heterostructures grown on 2°-off-axis 4H–SiC epilayers
- Understanding the impact of extended crystalline defects on 4H-SiC power MOSFETs by multiscale correlative electrical, optical and thermal characterizations
- Thermal annealing effects on the electrical and structural properties of Mo Schottky contacts to n-type 4H-SiC
- Optimisation of the Fabrication of Sidewall-Implanted Trenches in a 3.3 kV SiC Semi-Superjunction Schottky Barrier Diode
