Pubblicazioni
- Experimental electron band alignment of 1T’and 2H MoTe2/SiO2 interface using internal photoemission spectroscopy
- Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization
- Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization
- Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance (data)
- Spin-Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance (data)
- Spin‐Charge Conversion in Fe/Au/Sb<sub>2</sub>Te<sub>3</sub> Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance
- Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon (data)
- Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon
- Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon (data)
- Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb<sub>2</sub>Te<sub>3</sub> Topological Insulator Chemically Grown on Silicon
- Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon
- Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition
- Engineering the Growth of MoS2 via Atomic Layer Deposition of Molybdenum Oxide Film Precursor
- Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films
- Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching
- The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction
- Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching
- Thermodynamic stability of high phosphorus concentration in silicon nanostructures
- Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)
- New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
