Pubblicazioni
- Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC
- Structural Properties and Energy Band Alignment of Crystalline AlN Grown by Atomic Layer Deposition on Epitaxial Graphene
- Electrical Characterization of Mo-Carbide Schottky Contacts on 4H-SiC
- Scalable Dielectrics Technology for 2D Materials Electronics
- Nucleation studies of high-κ aluminum oxide and hafnium oxide thin films on silicon carbide by plasma-enhanced atomic layer deposition
- Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates
- Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
- Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
- Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer
- Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)
- Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)
- Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
- Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
- Wide band gap transistor with nanolaminated insulating gate structure and process for manufacturing a wide band gap transistor
- Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
- Nanotechnology for Electronic Materials and Devices
- Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
- Nanotechnology for Electronic Materials and Devices
- Nanotechnology for electronic materials and devices
- Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures
