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Andrea Parisini

Sede bologna-unit
Email parisini@bo.imm.cnr.it

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193

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1984

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2023

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Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3.
Autori: Andrea Parisini
2023-09-21 • Origin: ACS Applied Materials & Interfaces • Biblio references: Volume: 15 Issue: 39 Pages: 45997-46009
Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry
Autori: Andrea Parisini
2022-07-01 • Origin: Journal of Vacuum Science & Technology A • Publisher: AIP Publishing • Biblio references: Volume: 40 Issue: 4
The role of self interstitials in As+ diffusion of implanted silicon
Autori: Andrea Parisini
2021-01-31 • Origin: Microscopy of Semiconducting Materials, 1987 • Publisher: CRC Press • Biblio references: Pages: 491-496
Hall measurements under weak persistent photoexcitation in Si-doped Al x Ga1-x As
Autori: Andrea Parisini
2020-11-25 • Origin: D (X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991 • Publisher: CRC Press • Biblio references: Pages: B27-B30
Conduction mechanism and shallow donor properties in silicon-doped ɛ-G a 2 O 3 thin films: An electron paramagnetic resonance study
Autori: Andrea Parisini
2019-08-02 • Origin: Physical Review Materials • Publisher: American Physical Society • Biblio references: Volume: 3 Issue: 8 Pages: 084601
Si and Sn doping of ε-Ga2O3 layers
Autori: Andrea Parisini, Alessio Lamperti
2019-03-01 • Origin: APL Materials • Publisher: AIP Publishing • Biblio references: Volume: 7 Issue: 3

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