Pubblicazioni
- Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3.
- Study of SnO/ɛ-Ga2O3 p–n diodes in planar geometry
- The role of self interstitials in As+ diffusion of implanted silicon
- Hall measurements under weak persistent photoexcitation in Si-doped Al x Ga1-x As
- Conduction mechanism and shallow donor properties in silicon-doped ɛ-G a 2 O 3 thin films: An electron paramagnetic resonance study
- Si and Sn doping of ε-Ga2O3 layers
- The electronic structure of ε-Ga2O3
- Assessment of phonon scattering-related mobility in β-Ga2O3
- Comparison of Cliff–Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films
- Comparison of Cliff–Lorimer-Based Methods of Scanning Transmission Electron Microscopy (STEM) Quantitative X-Ray Microanalysis for Application to Silicon Oxycarbides Thin Films
- ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
- Thermal stability of ε-Ga2O3 polymorph
- SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO2 multilayers
- SiGe layer thickness effect on the structural and optical properties of well-organized SiGe/SiO <sub>2</sub> multilayers
- Thickness and orientation dependence of the average HAADF STEM normalized intensity: a comparison with Monte Carlo and Multislice simulations.
- Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion
- Size effect on high temperature variable range hopping in Al<sup>+</sup>implanted 4H-SiC
- Size effect on high temperature variable range hopping in Al+ implanted 4H-SiC
- Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion
- Structural and functional characterizations of Al+ implanted 4H-SiC layers and Al+ implanted 4H-SiC pn junctions after 1950° C post implantation annealing
