Pubblicazioni
- The effects of different anode manufacturing methods on deep levels in 4H-SiC p+ n diodes
- The effects of different anode manufacturing methods on deep levels in 4H-SiC p+n diodes
- Carrier lifetime dependence on temperature and proton irradiation in 4H-SiC device: an experimental law
- Investigating Mesa Structure Impact on CV Measurements
- Investigating Mesa Structure Impact on C-V Measurements
- Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law
- Investigating Mesa Structure Impact on CV Measurements
- Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law
- Native Silicon Oxide Properties Determined by Doping
- Native Silicon Oxide Properties Determined by Doping
- Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si
- Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC
- Estimation of Activation and Compensation Ratios in Al+ Ion Implanted 4H-SiC: Comparison of Two Methodologies
- Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
- Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
- Estimation of Activation and Compensation Ratios in Al<sup>+</sup> Ion Implanted 4H-SiC: Comparison of Two Methodologies
- Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
- Mechanism Governing Surface Roughening of Al Ion Implanted 4H-SiC during Annealing under a C-Cap
- Status of 3 <scp>C</scp> ‐ <scp>SiC</scp> Growth and Device Technology
- Status of 3C-SiC Growth and Device Technology
