Pubblicazioni
- Superior quality of n− GaN epilayer grown on ammonothermal substrate accessed by DLTS
- Electrical Characterization of Mo-Carbide Schottky Contacts on 4H-SiC
- Modeling of Non-Ideal Ni/Ga <sub>2</sub> O <sub>3</sub> Schottky Contacts by Two-Barrier Thermionic Emission Model
- Impact of the Schottky Barrier and Contact‐Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS <sub>2</sub> Transistors
- Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
- Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
- Structural and electrical properties of AlGaN/GaN heterostructures grown on 2°-off-axis 4H–SiC epilayers
- A Comparison Study of Substrates Quality for GaN Vertical Devices
- Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures
- Two-dimensional electron gas isolation mechanism in Al0. 2Ga0. 8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation
- Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates
- Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates
- Tunneling and thermionic emission as charge transport mechanisms in W-based Schottky contacts on AlGaN/GaN heterostructures
- Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
- Evolution of the Electrical and Microstructural Properties of Mo/4H-SiC Contact with the Annealing Temperature
- Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation
- Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
- Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
- Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition
- Schottky contacts on sulfurized silicon carbide (4H-SiC) surface
